This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1463G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Package
• Code
SSMini3-F3
• Marking Symbol: I
• Pin Name
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−150
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
−150
V
−5
V
Collector current
IC
ICP
PC
Tj
−50
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
−100
125
125
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
ICBO
Conditions
Min
−150
−5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
V
VCB = −100 V, IE = 0
VCE = −5 V, IC = −10 mA
−1
330
−1
µA
hFE
130
VCE(sat) IC = −30 mA, IB = −3 mA
V
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
200
4
MHz
pF
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Noise voltage
NV
VCE = −10 V, IC = −1 mA, GV = 80 dB
150
mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
hFE
130 to 220
185 to 330
Publication date: May 2007
SJC00388AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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