Features
• Frequency Range 5 GHz to 6 GHz
• Pout 25 dBm at 5.8 GHz
• Gain Typically 30 dB
• Pin Typically 0 dBm
• VCC 2.7V to 3.8V
• Power Consumption in Power-down Mode Typically < 1 µA
• Package: QFN16 3 mm × 3 mm
5.8 GHz WDCT
Power Amplifier
Benefits
• Biasing Control Extends Battery Time
• Simple Input and Output Matching
• Only One Single Supply Required
• No High-side Switching Transistor Required
ATR7040
1. Description
1.1
Process
This 5-GHz power amplifier (PA) is designed using Atmel’s Silicon-Germanium (SiGe)
process and provides high efficiency.
1.2
Circuitry
The PA, ATR7040, consists of a three-stage amplifier with a typical output power of
25 dBm. The output stage was implemented using an open-collector structure. Power
up, power down, and output level are controlled at bias control pin 6 (Vctl).
4868C–DECT–05/06
ATR7040
2. Pin Configuration
Figure 2-1. Pinning QFN16
16 15 14 13
NC
RFOUT/VCC3
RFOUT/VCC3
NC
12 NC
11 NC
1
2
3
4
ATR7040
10 RFIN
GND on the
PADDLE
9
NC
5
6
7
8
Table 2-1.
Pin Description
Pin
Symbol
NC
Function
Not connected(1)
1
2
RFOUT
RFOUT
NC
RF output and supply voltage for output amplifier stage
RF output and supply voltage for output amplifier stage
Not connected(1)
3
4
5
NC
Not connected(1)
6
VCC2
VCC1
NC
Supply voltage for second amplifier stage
Supply voltage for first amplifier stage
Not connected(1)
7
8
9
NC
Not connected(1)
10
RFIN
NC
RF input
Not connected(1)
11
12
NC
Not connected(1)
13
VCTL
GND
VCC_CTL
NC
Control voltage for power ramping
Ground
14
15
Supply voltage for biasing control block
Not connected(1)
16
PADDLE
–
Ground
Note:
1. Pin can be connected to paddle for increased GND area
3
4868C–DECT–05/06
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VCC
Icc
Value
Unit
V
Supply voltage
5
400
Supply current
mA
°C
Junction temperature
Storage temperature
Input RF power
Control voltage
Tj
150
TStg
Pin
–40 to +125
10
°C
dBm
V
Vctl
2.5
Note:
The part may not survive all maximums applied simultaneously.
Electrostatic sensitive device.
Observe precautions for handling.
4. Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient package QFN16, 3 × 3,
slug soldered on PCB
RthJA
40
K/W
5. Operating Range
Parameters
Symbol
VCC
Value
Unit
V
Supply voltage
2.7 to 3.8
Operating frequency range
Ambient temperature range
fin
5100 to 5900
–25 to +75
MHz
°C
Tamb
4
ATR7040
4868C–DECT–05/06
ATR7040
6. Electrical Characteristics
Operating conditions: VCC = 3.6V, Vctl = 1.5V, input frequency = 5.8 GHz, input power 0 dBm, pulsed mode, duty cycle 10%, ton = 1 ms,
Tamb = 25°C, unless otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
5100
2.7
Typ.
Max.
5900
3.8
Unit
Depends on external
circuitry
1.0
Frequency range
MHz
1.1
1.2
1.3
1.4
Supply voltage
Vcc
Pin
Psat
Pd
3.6
0
V
dBm
dBm
dB
V
Input power
Saturated power output
Output power deviation
25
–2
+2
1.7
0.2
PA operating mode
Power-down mode
PA on
Vctl
Vctl
Ictl
1.0
1.5
Control voltage range
V
1.6
1.7
1.8
Control input current
Input return loss
Isolation
5
90
–7
35
µA
dB
dB
With external matching
Vctl ≤ 0.2V
10
–6
ISOr
PAE
Icc
33
At power saturation,
Pin = 0 dBm
1.9
Power added efficiency
35
250
1
%
mA
µA
%
1.10 Current consumption
For 25 dBm output power
Current consumption in
1.11
Vctl ≤ 0.2V
Icc
power-down mode
1.12 Duty cycle of operation
At saturated output power
100
7. Application Circuit
Figure 7-1. Application Circuit
VCC
C6
slug
8
7
6
5
L1
9
4
3
RFIN
TRL1
10
11
12
C3
RFOUT
TRL2
2
1
C1
C2
13 14 15 16
VCTL
VCC
5
4868C–DECT–05/06
8. Diagrams
Figure 8-1. Output Power, Efficiency and Supply Currents Versus Input Frequency
Pin = 0 dBm, Vcc = 3.6V, Vctl = 1.4V
40
35
30
25
20
15
400
350
300
250
200
150
10 0
50
PAE (%)
Iges (mA)
Pout (dBm)
10
0
5600
5650
5700
5750
5800
5850
5900
5950
6000
Frequency (MHz)
Figure 8-2. Output Power, Gain, Efficiency and Supply Currents Versus Input Power
Freq = 5800 MHz, Vcc = 3.6V, Vctl = 1.4V
40
30
20
10
400
350
300
250
200
150
10 0
50
Gain (dB)
PAE (%)
0
-10
-20
-30
Iges (mA)
Pout (dBm)
0
-20
-15
-10
-5
0
5
Pin (dBm)
Figure 8-3. Output Power, Efficiency and Supply Currents Versus Operating Voltage
Freq = 5800 MHz, Pin = 0 dBm, Vctl = 1.5V
40
35
30
25
20
15
450
400
350
300
250
200
150
10 0
50
PAE (%)
Iges (mA)
Pout (dBm)
10
0
2.5
3.0
3.5
4.0
Vcc (V)
6
ATR7040
4868C–DECT–05/06
ATR7040
9. Ordering Information
Extended Type Number
Package
Remarks
ATR7040-PVPG
QFN16, 3 × 3
QFN16, 3 × 3
Taped and reeled, MOQ 2000, Pb-free
Taped and reeled, MOQ 8000, Pb-free
ATR7040-PVQG
10. Package Information
Package: QFN 16 - 3x3
Exposed pad 1.7x1.7
(acc. JEDEC OUTLINE No. MO-220)
Dimensions in mm
3
0.9 0.1
+0
1.7
Not indicated tolerances 0.05
0.05
-0.05
16
1
13
8
16
5
12
9
1
technical drawings
according to DIN
specifications
4
4
0.5 nom.
1.5
Drawing-No.: 6.543-5115.01-4
Issue: 1; 07.03.05
Assembly Chip PAC
7
4868C–DECT–05/06
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4868C–DECT–05/06
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