DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGD906; BGD906MI
860 MHz, 21.5 dB gain power
doubler amplifier
Product specification
2001 Nov 01
Supersedes data of 2000 Mar 28
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
power gain
CONDITIONS
MIN.
TYP. MAX. UNIT
Gp
f = 50 MHz
21.2
22
0.5
−
21.5
22.5
1
21.8
23
dB
dB
dB
f = 900 MHz
SL
FL
s11
slope straight line
flatness straight line
input return losses
f = 40 to 900 MHz
1.5
f = 40 to 900 MHz
−
±0.35 dB
f = 40 to 80 MHz
22
21
18
17
16
22
21
20
19
18
17
16
−45
−
25
24
23
23
20
25
25
23
22
24
23
21
−
−
−
−
−
−
−
−
−
−
−
−
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 900 MHz
s22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 900 MHz
s21
phase response
f = 50 MHz
+45
CTB
composite triple beat
49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz
77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
−68.5 −66
−
−
−
−70
−63
−59
−67
−61
−57
110 chs; fm = 397.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
−
−62.5 −60.5 dB
129 chs; fm = 697.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
−
−57
−54.5 dB
Xmod
cross modulation
49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz
77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−
−
−
−64
−67.5 −65
−64
−61
−60
−62
dB
dB
−61.5 dB
−60
−58
dB
dB
110 chs; fm = 397.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
129 chs; fm = 859.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
−
−56.5 −55
dB
2001 Nov 01
3
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
CSO
composite second
order distortion
49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz
77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
−
−63
−74
−66
−59
−64
−59
−65
−58
−54
−60
dB
dB
dB
dB
dB
−
−
−
−
110 chs; fm = 150 MHz;
Vo = 49 dBmV at 550 MHz; note 1
129 chs; fm = 150 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
−
−60
−54
dB
d2
second order distortion note 3
−
−83
−70
dB
note 4
note 5
−
−
63.5
64.5
66.5
48.5
−81.5 −73
dB
−79
64.5
66.5
69
−76
−
−
dB
Vo
output voltage
dim = −60 dB; note 6
dBmV
dBmV
dBmV
dBmV
dim = −60 dB; note 7
dim = −60 dB; note 8
−
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz
49
−
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz
51
54
−
dBmV
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 900 MHz
note 9
−
−
−
−
5
5.5
5
dB
dB
dB
dB
mA
4.5
5
6
6
7.5
435
Itot
total current
405
420
consumption (DC)
Notes
7. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
1. Tilt = 9 dB (50 to 550 MHz)
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
fq = 747.25 MHz; Vq = Vo −6 dB;
fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq −fr = 738.25 MHz.
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
8. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
4. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq −fr = 538.25 MHz.
5. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
9. The module normally operates at VB = 24 V, but is
able to withstand supply transients up to 35 V.
6. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq −fr = 849.25 MHz.
2001 Nov 01
4
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
MGS661
MGS662
52
−50
−50
52
handbook, halfpage
handbook, halfpage
V
X
V
o
(dBmV)
CTB
(dB)
o
mod
(1)
(dBmV)
(dB)
(2)
(3)
(4)
(2)
(1)
(2)
(3)
(4)
−60
−70
−80
48
−60
48
(3)
(4)
(2)
(3)
(4)
44
40
36
−70
44
40
36
(1)
(1)
−80
−90
−90
0
200
400
600
800
0
200
400
600
800
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
MGS663
−50
52
handbook, halfpage
(2)
V
CSO
(dB)
o
(1)
(dBmV)
−60
48
(1)
(3)
(2)
−70
−80
−90
44
40
36
(3)
(4)
(4)
0
200
400
600
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
5
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
MGS665
MGS664
−50
52
−50
52
handbook, halfpage
handbook, halfpage
(2)
V
X
V
CTB
(dB)
mod
o
o
(1)
(2)
(3)
(4)
(dB)
(3)
(dBmV)
(dBmV)
(4)
−60
48
−60
−70
−80
48
(1)
−70
44
40
36
44
40
36
−80
−90
−90
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
MGS666
−50
52
handbook, halfpage
V
o
(dBmV)
CSO
(dB)
(1)
(2)
(3)
−60
−70
−80
−90
48
44
40
36
(4)
0
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
6
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
MGS667
MGS668
−20
−20
handbook, halfpage
handbook, halfpage
CTB
(dB)
CSO
(dB)
−30
−40
−50
−60
−30
−40
−50
−60
(1)
(2)
(1)
(2)
(3)
(3)
−70
−70
40
45
50
55
40
45
50
55
V
(dBmV)
V
(dBmV)
o
o
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz.
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz.
(1) Typ. +3 σ.
(2) Typ.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
(3) Typ. −3 σ.
Fig.8 Composite triple beat as a function of output
voltage.
Fig.9 Composite second order distortion as a
function of output voltage.
2001 Nov 01
7
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
y
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
U
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
max.
1
2
UNIT
e
e
p
q
W
w
y
b
c
F
q
q
S
U
1
1
2
2
max.
max.
4.15
3.85
0.51
0.38
6-32
UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2 44.75
8
0.25 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-02-06
SOT115J
2001 Nov 01
8
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 01
9
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
NOTES
2001 Nov 01
10
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
NOTES
2001 Nov 01
11
Philips Semiconductors – a worldwide company
Contact information
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp12
Date of release: 2001 Nov 01
Document order number: 9397 750 08863
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