Philips Stereo Amplifier BGD814 User Manual

DISCRETE SEMICONDUCTORS  
DATA SHEET  
ndbook, halfpage  
BGD814  
860 MHz, 20 dB gain power  
doubler amplifier  
Product specification  
2001 Nov 01  
Supersedes data of 2001 Sep 07  
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
CHARACTERISTICS  
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 .  
SYMBOL  
PARAMETER  
power gain  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
Gp  
f = 45 MHz  
19.7  
20.5  
0.5  
20.3  
21.5  
1.5  
dB  
dB  
dB  
f = 870 MHz  
SL  
FL  
slope straight line  
f = 45 to 870 MHz; note 1  
f = 45 to 100 MHz  
flatness straight line  
±0.25 dB  
f = 100 to 800 MHz  
±0.5  
0.1  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
deg  
dB  
f = 800 to 870 MHz  
0.4  
25  
22  
19  
17  
17  
16  
15  
12  
24  
22  
17  
18  
16  
15  
15  
13  
45  
s11  
input return losses  
f = 45 to 80 MHz  
f = 80 to 160 MHz  
f = 160 to 320 MHz  
f = 320 to 550 MHz  
f = 550 to 650 MHz  
f = 650 to 750 MHz  
f = 750 to 870 MHz  
f = 870 to 914 MHz  
s22  
output return losses  
f = 45 to 80 MHz  
f = 80 to 160 MHz  
f = 160 to 320 MHz  
f = 320 to 550 MHz  
f = 550 to 650 MHz  
f = 650 to 750 MHz  
f = 750 to 870 MHz  
f = 870 to 914 MHz  
+45  
66  
60.5 dB  
56 dB  
55.5 dB  
s21  
phase response  
f = 50 MHz  
CTB  
composite triple beat  
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz  
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz  
132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz  
112 chs; fm = 547.25 MHz; Vo = 50.2 dBmV at  
745 MHz; note 2  
79 chs; fm = 331.25 MHz; Vo = 47.3 dBmV at  
547 MHz; note 3  
65  
dB  
Xmod  
cross modulation  
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz  
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz  
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz  
66  
62.5 dB  
61  
57  
dB  
dB  
dB  
112 chs; fm = 745.25 MHz; Vo = 50.2 dBmV at  
745 MHz; note 2  
79 chs; fm = 445.25 MHz; Vo = 47.3 dBmV at  
547 MHz; note 3  
66  
dB  
2001 Nov 01  
3
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
CSO  
composite second  
order distortion  
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz  
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz  
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz  
68  
61  
57  
56  
dB  
dB  
dB  
dB  
112 chs; fm = 210 MHz; Vo = 50.2 dBmV at  
745 MHz; note 2  
79 chs; fm = 210 MHz; Vo = 47.3 dBmV at  
547 MHz; note 3  
64  
dB  
d2  
second order distortion note 4  
64  
48  
69  
dB  
Vo  
output voltage  
dim = 60 dB; note 5  
dBmV  
dBmV  
CTB compression = 1 dB; 132 chs flat;  
f = 859.25 MHz  
CSO compression = 1 dB; 132 chs flat;  
f = 860.5 MHz  
50  
dBmV  
NF  
noise figure  
f = 50 MHz  
f = 550 MHz  
f = 750 MHz  
f = 870 MHz  
note 6  
5.5  
5.5  
6.5  
7.5  
410  
dB  
dB  
dB  
dB  
mA  
Itot  
total current  
380  
395  
consumption (DC)  
Notes  
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.  
2. Tilt = 10.2 dB (55 to 745 MHz).  
3. Tilt = 7.3 dB (55 to 547 MHz).  
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.  
5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo 6 dB; fr = 860.25 MHz;  
Vr = Vo 6 dB; measured at fp + fq fr = 849.25 MHz.  
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.  
2001 Nov 01  
4
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
MLD345  
MLD346  
50  
52  
40  
52  
handbook, halfpage  
handbook, halfpage  
(1)  
(1)  
X
V
o
(dBmV)  
V
CTB  
(dB)  
mod  
(dB)  
o
(dBmV)  
60  
70  
80  
48  
50  
48  
44  
40  
36  
60  
44  
(2)  
(3)  
(2)  
(4)  
40  
(3)  
(4)  
70  
36  
1000  
90  
80  
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
f (MHz)  
f (MHz)  
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).  
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).  
(1) Vo.  
(3) Typ.  
(1) Vo.  
(3) Typ.  
(2) Typ. +3 σ.  
(4) Typ. 3 σ.  
(2) Typ. +3 σ.  
(4) Typ. 3 σ.  
Fig.2 Composite triple beat as a function of  
frequency under tilted conditions.  
Fig.3 Cross modulation as a function of frequency  
under tilted conditions.  
MLD347  
60  
52  
handbook, halfpage  
(1)  
V
CSO  
(dB)  
o
(2)  
(dBmV)  
70  
48  
(3)  
80  
44  
40  
36  
90  
(4)  
100  
0
200  
400  
600  
800  
1000  
f (MHz)  
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).  
(1) Vo.  
(3) Typ.  
(2) Typ. +3 σ.  
(4) Typ. 3 σ.  
Fig.4 Composite second order distortion as a  
function of frequency under tilted conditions.  
2001 Nov 01  
5
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
MLD348  
MLD349  
40  
52  
40  
52  
handbook, halfpage  
handbook, halfpage  
(1)  
(1)  
X
V
V
o
(dBmV)  
mod  
(dB)  
CTB  
(dB)  
o
(dBmV)  
50  
60  
70  
48  
50  
48  
(2)  
(3)  
44  
(2)  
(3)  
(4)  
44  
40  
36  
60  
(4)  
70  
40  
36  
1000  
80  
80  
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
f (MHz)  
f (MHz)  
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).  
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).  
(1) Vo.  
(3) Typ.  
(1) Vo.  
(3) Typ.  
(2) Typ. +3 σ.  
(4) Typ. 3 σ.  
(2) Typ. +3 σ.  
(4) Typ. 3 σ.  
Fig.5 Composite triple beat as a function of  
frequency under tilted conditions.  
Fig.6 Cross modulation as a function of frequency  
under tilted conditions.  
MLD350  
50  
52  
handbook, halfpage  
(1)  
V
CSO  
(dB)  
o
(dBmV)  
60  
48  
(2)  
(3)  
70  
44  
40  
36  
(4)  
80  
90  
0
200  
400  
600  
800  
1000  
f (MHz)  
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).  
(1) Vo.  
(3) Typ.  
(2) Typ. +3 σ.  
(4) Typ. 3 σ.  
Fig.7 Composite second order distortion as a  
function of frequency under tilted conditions.  
2001 Nov 01  
6
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
PACKAGE OUTLINE  
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;  
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads  
SOT115J  
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
y
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
U
A
d
max.  
A
max.  
D
max.  
E
max.  
L
min.  
Q
max.  
Z
max.  
1
2
UNIT  
e
e
p
q
W
w
y
b
c
F
q
q
S
U
1
1
2
2
max.  
max.  
4.15  
3.85  
0.51  
0.38  
6-32  
UNC  
mm 20.8 9.1  
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8  
2.4 38.1 25.4 10.2 4.2 44.75  
8
0.25 0.1 3.8  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
99-02-06  
SOT115J  
2001 Nov 01  
7
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
CAUTION  
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport  
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.  
2001 Nov 01  
8
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
NOTES  
2001 Nov 01  
9
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
NOTES  
2001 Nov 01  
10  
 
Philips Semiconductors  
Product specification  
860 MHz, 20 dB gain power doubler amplifier  
BGD814  
NOTES  
2001 Nov 01  
11  
 
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: [email protected].  
© Koninklijke Philips Electronics N.V. 2001  
SCA73  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613518/04/pp12  
Date of release: 2001 Nov 01  
Document order number: 9397 750 08857  
 

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