INTEGRATED CIRCUITS
SA615
High performance low power mixer FM IF
system
Product specification
1997 Nov 07
Replaces data of 1992 Nov 03
IC17 Data Handbook
Philips
Semiconductors
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
RSSI
OSCILLATOR
E
B
1
2
3
4
5
6
7
8
9
10
SR00342
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
9
UNITS
V
V
CC
Single supply voltage
Storage temperature range
Operating ambient temperature range SA615
T
STG
–65 to +150
–40 to +85
°C
T
A
°C
Thermal impedance
D package
N package
90
75
θ
JA
°C/W
SSOP package
117
DC ELECTRICAL CHARACTERISTICS
V
CC
= +6V, T = 25°C; unless otherwise stated.
A
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA615
TYP
UNITS
MAX
MIN
V
Power supply voltage range
DC current drain
4.5
8.0
7.4
V
mA
V
CC
I
5.7
CC
Mute switch input threshold (ON)
(OFF)
1.7
1.0
V
3
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
AC ELECTRICAL CHARACTERISTICS
T = 25°C; V = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step–up; IF frequency = 455kHz; R17 = 5.1k; RF
A
CC
level = –45dBm; FM modulation = 1kHz with +8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed
parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA615
TYP
UNITS
MIN
MAX
Mixer/Osc section (ext LO = 300mV)
f
Input signal frequency
500
150
5.0
MHz
MHz
dB
IN
f
Crystal oscillator frequency
Noise figure at 45MHz
OSC
Third-order input intercept point
Conversion power gain
f1 = 45.00; f2 = 45.06MHz
Matched 14.5dBV step-up
50Ω source
-12
13
dBm
dB
8.0
3.0
-1.7
4.7
dB
RF input resistance
RF input capacitance
Mixer output resistance
Single-ended input
kΩ
pF
3.5
4.0
(Pin 20)
1.25
1.50
kΩ
IF section
IF amp gain
Limiter gain
50Ω source
50Ω source
Test at Pin 18
80% AM 1kHz
39.7
62.5
-109
33
dB
dB
Input limiting -3dB, R = 5.1k
dBm
dB
17
AM rejection
25
60
43
mV
RM
Audio level, R = 100k
15nF de-emphasis
150
260
10
S
Unmuted audio level, R = 100k
150pF de-emphasis
RF level -118dB
530
12
mV
dB
dB
dB
mV
V
11
SINAD sensitivity
THD
S/N
Total harmonic distortion
Signal-to-noise ratio
-30
-42
68
No modulation for noise
IF level = -118dBm
IF level = -68dBm
1
IF RSSI output, R = 100kΩ
0
160
2.5
4.8
80
800
3.3
5.8
9
1.7
3.6
IF level = -18dBm
V
RSSI range
R = 100kΩ Pin 16
dB
dB
kΩ
kΩ
kΩ
kΩ
kΩ
9
RSSI accuracy
R = 100kΩ Pin 16
9
+2
IF input impedance
1.40
0.85
1.40
1.6
1.0
1.6
58
IF output impedance
Limiter intput impedance
Unmuted audio output resistance
Muted audio output resistance
58
RF/IF section (int LO)
Unmuted audio level
System RSSI output
mV
S
RM
4.5V = V , RF level = -27dBm
450
4.3
CC
4.5V = V , RF level = -27dBm
V
CC
NOTE:
1. The generator source impedance is 50Ω, but the SA615 input impedance at Pin 18 is 1500Ω. As a result, IF level refers to the actual signal
that enters the SA615 input (Pin 8) which is about 21dB less than the ”available power” at the generator.
4
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
network does not cause 12dB(v) insertion loss, a fixed or variable
resistor can be added between the first IF output (Pin 16) and the
interstage network.
CIRCUIT DESCRIPTION
The SA615 is an IF signal processing system suitable for second IF
or single conversion systems with input frequency as high as 1GHz.
The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of
gain from a 50Ω source. The bandwidth of the limiter is about
28MHz with about 62.5dB(v) of gain from a 50Ω source. However,
the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ
source applications. The overall system is well-suited to battery
operation as well as high performance and high quality products of
all types.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90dB. For operation at
intermediate frequencies greater than 455kHz, special care must be
given to layout, termination, and interstage loss to avoid instability.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 5dB, conversion gain of
13dB, and input third-order intercept of –10dBm. The oscillator will
operate in excess of 1GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The demodulated output of the quadrature detector is available at
two pins, one continuous and one with a mute switch. Signal
attenuation with the mute activated is greater than 60dB. The mute
input is very high impedance and is compatible with CMOS or TTL
levels.
The output of the mixer is internally loaded with a 1.5kΩ resistor
permitting direct connection to a 455kHz ceramic filter. The input
resistance of the limiting IF amplifiers is also 1.5kΩ. With most
455kHz ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the
log signal strength indicator, there must be a 12dB(v) insertion loss
between the first and second IF stages. If the IF filter or interstage
A log signal strength completes the circuitry. The output range is
greater than 90dB and is temperature compensated. This log signal
strength indicator exceeds the criteria for AMPs or TACs cellular
telephone.
NOTE: dB(v) = 20log V /V
OUT IN
5
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
–25dB,
–10dB,
–29dB,
929/50Ω PAD
–10.6dB,
50/50Ω PAD
–36dB,
156k/50Ω PAD
1500/50Ω PAD 50/50Ω PAD
51.5
C20
96.5
51.7
96.5
32.6
50.5
71.5
32.8
2430
C24
71.5
C22
1.3k
3880
R17
5.1k
C15
C19
C16
SW9
FLT1 SW8
C23
SW7
SW6
FLT2
SW5
C18
C21
C17
20
19
18
17
16
15
14
13
12
11
IF AMP
700
LIMITER
RSSI
MIXER
QUAD
DETECTOR
OSCILLATOR
MUTE
SWITCH
EMITTER
BASE
1
2
3
4
5
6
7
8
9
10
C9
R9
R10
R11
SW1
SW3
C8
SW4
C1
C2
L1
C7
L2
C10
C11
C12
C13
C5
R4
51.1
IFT1
SW2
X1
R1
C6
C26
C4
C3
R2
EXT.
LOC
OSC
R7
30.5
”C” WEIGHTED
AUDIO
R3
45MHZ
MEASUREMENT
CIRCUIT
C14
44.545
R8
39.2
R6
178
45.06
MHZ
MUTE
RSSI
OUTPUT
AUDIO UNMUTED
AUDIO
V
CC
MINI–CIRCUIT ZSC2–1B
Automatic Test Circuit Component List
C1 47pF NPO Ceramic
C2 180pF NPO Ceramic
C21
C23
C25
C26
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
390pF +10% Monolithic Ceramic
C5
100nF +10% Monolithic Ceramic
C6 22pF NPO Ceramic
C7 1nF Ceramic
C8 10.0pF NPO Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
IFT 1
L1
L2
455kHz 270µH TOKO #303LN-1129
C9
C10
C11
C12
C13
C14
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum) *
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
300nH TOKO #5CB-1055Z
0.8µH TOKO 292CNS–T1038Z
X1 44.545MHz Crystal ICM4712701
R9
R17
R10
R11
100k +1% 1/4W Metal Film
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
C15 10pF NPO Ceramic
C17
C18
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
*NOTE: This value can be reduced when a battery is the power source.
SR00343
Figure 3. SA615 45MHz Test Circuit (Relays as shown)
6
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
R17
5.1k
C15
FLT1
C23
FLT2
C18
C21
C17
20
19
18
17
16
15
14
13
12
11
IF AMP
700
LIMITER
RSSI
MIXER
QUAD
DETECTOR
OSCILLATOR
MUTE
SWITCH
1
2
3
4
5
6
7
8
9
10
C9
R9
R10
R11
C1
C2
C8
L1
C7
R5
C5
C10
C25
C11
C12
C13
IFT1
L2
45MHz
INPUT
X1
C26
C6
C14
MUTE
RSSI
OUTPUT
AUDIO UNMUTED
AUDIO
V
CC
NE/SA615N
Application Component List
C1 47pF NPO Ceramic
C2 180pF NPO Ceramic
C21
C23
C25
C26
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
390pF +10% Monolithic Ceramic
C5
100nF +10% Monolithic Ceramic
C6 22pF NPO Ceramic
C7 1nF Ceramic
C8 10.0pF NPO Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
IFT 1
L1
L2
455kHz 270µH TOKO #303LN-1129
C9
C10
C11
C12
C13
C14
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum) *
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
300nH TOKO #5CB-1055Z
0.8µH TOKO 292CNS–T1038Z
X1 44.545MHz Crystal ICM4712701
R9
R17
R10
R11
100k +1% 1/4W Metal Film
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
C15 10pF NPO Ceramic
C17
C18
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
*NOTE: This value can be reduced when a battery is the power source.
SR00344
Figure 4. SA615 45MHz Application Circuit
7
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
RF GENERATOR
SA615 DEM0–BOARD
45MHz
RSSI
AUDIO
DATA
V
CC
(+6)
C–MESSAGE
DC VOLTMETER
HP339A DISTORTION
ANALYZER
SCOPE
SR00345
Figure 5. SA615 Application Circuit Test Set Up
NOTES:
1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be
affected by the noise of the scope and HP339 analyzer.
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or
8kHz if you use 30kHz filters.
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or –120dBm at the RF input.
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10–15µF or higher value tantalum
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in
production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2–3dB.
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22kΩ, but should not
be below 10kΩ.
8
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
20
RF = 45MHz
IF = 455kHz
V
= 6V
CC
AUDIO REF = 174mV
RMS
RSSI
0
–20
–40
5
4
3
(Volts)
THD NOISE
AM (80%)
–60
–80
2
1
0
NOISE
RSSI
(Volts)
–100
–130
–110
–90
–70
–50
–30
–10
10
RF INPUT LEVEL (dBm)
SR00346
Figure 6. SA615 Application Board at 25°C
9
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
DIP20: plastic dual in-line package; 20 leads (300 mil)
SOT146-1
10
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
11
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
12
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
NOTES
13
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA615
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 05-98
Document order number:
9397 750 03916
Philips
Semiconductors
|