This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0792A
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Package
Code
Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
Mini3-G1
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Pin Name
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–185
Unit
V
Marking Symbol: 2F
–185
V
–5
V
–50
mA
mA
mW
°C
Peak collector current
ICP
–100
Collector power dissipation
Junction temperature
PC
200
Tj
150
Storage temperature
T
stg
–55 to +150
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
–185
–5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
VCEO IC = –100 mA, IB = 0
VEBO IE = –10 mA, IC = 0
V
ICBO
hFE
VCB = –100 V, IE = 0
–1
330
–1
mA
VCE = –5 V, IC = –10 mA
130
VCE(sat) IC = –30 mA, IB = –3 mA
V
fT
VCB = –10 V, IE = 10 mA, f = 200 MHz
200
4
MHz
Collector output capacitance
Cob
VCB = –10 V, IE = 0, f = 1 MHz
pF
(Common base, input open circuited)
VCB = –10 V, IC = –1 mA, GV = 80 dB,
Noise voltage
NV
150
mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
hFE
R
S
130 to 220
2FR
185 to 330
2FS
Merking symbol
Publication date : October 2008
SJC00417AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0792A
Mini3-G1
Unit: mm
+0.10
−0.05
0.40
+0.10
−0.05
0.16
3
2
1
(0.95)
(0.95)
1.9 ±0.1
+0.20
−0.05
2.90
SJC00417AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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